Structural and dielectric properties of ZnO-doped (Zr0.8Sn 0.2)TiO4 films at radio frequency

Cheng Shing Hsu, Cheng Liang Huang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

ZnO-doped (Zr0.8Sn0.2)TiO4 thin films were prepared by rf magnetron sputtering on n-type Si(100) substrates at different rf power and substrate temperature have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power (300 W-400 W) and substrate temperature (400°C-450°C). The measurement with radio frequency is taken with a vector network analyzer and a ground-signal probe. The dielectric properties of thin film with radio frequency were strongly depended on the quality of the surface microstructure. Besides, the dielectric constants of ZST films were decreased with increasing frequency. For f = 2.5 GHz, the dielectric constant of 28 was obtained at a rf power level of 400 W and substrate temperature of 450°C and it may applied to integrated the communication component such as chip capacitor with Bluetooth or PCS system.

原文English
頁(從 - 到)127-136
頁數10
期刊Integrated Ferroelectrics
51
DOIs
出版狀態Published - 2003

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 控制與系統工程
  • 陶瓷和複合材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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