Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

Y. K. Liu; P. L. Tso; D. Pradhan; I. N. Lin; M. Clark; Y. Tzeng

doi:10.1016/j.diamond.2005.06.012

Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

Y. K. Liu, P. L. Tso, D. Pradhan, I. N. Lin, M. Clark, Y. Tzeng

研究成果: Conference article

15 引文斯高帕斯（Scopus）

摘要

Gas mixtures containing up to 40% nitrogen by volume and 1% CH₄ with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

原文	English
頁（從 - 到）	2059-2063
頁數	5
期刊	Diamond and Related Materials
卷	14
發行號	11-12
DOIs	https://doi.org/10.1016/j.diamond.2005.06.012
出版狀態	Published - 2005 十一月 1
事件	Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue - 持續時間: 2005 五月 11 → 2005 五月 14

指紋

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

引用此

Liu, Y. K., Tso, P. L., Pradhan, D., Lin, I. N., Clark, M., & Tzeng, Y. (2005). Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen. Diamond and Related Materials, 14(11-12), 2059-2063. https://doi.org/10.1016/j.diamond.2005.06.012

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abstract = "Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.",

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T1 - Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

AU - Liu, Y. K.

AU - Tso, P. L.

AU - Pradhan, D.

AU - Lin, I. N.

AU - Clark, M.

AU - Tzeng, Y.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

AB - Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

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EP - 2063

JO - Diamond and Related Materials

JF - Diamond and Related Materials

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Y2 - 11 May 2005 through 14 May 2005

ER -

存取文件

10.1016/j.diamond.2005.06.012