Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

Y. K. Liu, P. L. Tso, D. Pradhan, I. N. Lin, M. Clark, Y. Tzeng

研究成果: Conference article

15 引文 (Scopus)

摘要

Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

原文English
頁(從 - 到)2059-2063
頁數5
期刊Diamond and Related Materials
14
發行號11-12
DOIs
出版狀態Published - 2005 十一月 1
事件Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue -
持續時間: 2005 五月 112005 五月 14

指紋

Diamond
Diamond films
Structural properties
Diamonds
Electric properties
diamond films
Nitrogen
diamonds
electrical properties
nitrogen
Plasma CVD
vapor deposition
Optical emission spectroscopy
Argon
optical emission spectroscopy
Plasma enhanced chemical vapor deposition
Gas mixtures
Field emission
electron emission
gas mixtures

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

引用此文

Liu, Y. K. ; Tso, P. L. ; Pradhan, D. ; Lin, I. N. ; Clark, M. ; Tzeng, Y. / Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen. 於: Diamond and Related Materials. 2005 ; 卷 14, 編號 11-12. 頁 2059-2063.
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abstract = "Gas mixtures containing up to 40{\%} nitrogen by volume and 1{\%} CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.",
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Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen. / Liu, Y. K.; Tso, P. L.; Pradhan, D.; Lin, I. N.; Clark, M.; Tzeng, Y.

於: Diamond and Related Materials, 卷 14, 編號 11-12, 01.11.2005, p. 2059-2063.

研究成果: Conference article

TY - JOUR

T1 - Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

AU - Liu, Y. K.

AU - Tso, P. L.

AU - Pradhan, D.

AU - Lin, I. N.

AU - Clark, M.

AU - Tzeng, Y.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

AB - Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

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