摘要
Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 2059-2063 |
| 頁數 | 5 |
| 期刊 | Diamond and Related Materials |
| 卷 | 14 |
| 發行號 | 11-12 |
| DOIs | |
| 出版狀態 | Published - 2005 十一月 1 |
| 事件 | Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue - 持續時間: 2005 五月 11 → 2005 五月 14 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering
引用此文
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Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen. / Liu, Y. K.; Tso, P. L.; Pradhan, D.; Lin, I. N.; Clark, M.; Tzeng, Y.
於: Diamond and Related Materials, 卷 14, 編號 11-12, 01.11.2005, p. 2059-2063.研究成果: Conference article
TY - JOUR
T1 - Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen
AU - Liu, Y. K.
AU - Tso, P. L.
AU - Pradhan, D.
AU - Lin, I. N.
AU - Clark, M.
AU - Tzeng, Y.
PY - 2005/11/1
Y1 - 2005/11/1
N2 - Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.
AB - Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.
UR - http://www.scopus.com/inward/record.url?scp=27744592013&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=27744592013&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2005.06.012
DO - 10.1016/j.diamond.2005.06.012
M3 - Conference article
AN - SCOPUS:27744592013
VL - 14
SP - 2059
EP - 2063
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 11-12
ER -