Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

P. T. Hsieh, Y. C. Chen, C. M. Wang, Y. Z. Tsai, C. C. Hu

研究成果: Article同行評審

41 引文 斯高帕斯(Scopus)

摘要

ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.

原文English
頁(從 - 到)345-349
頁數5
期刊Applied Physics A: Materials Science and Processing
84
發行號3
DOIs
出版狀態Published - 2006 八月 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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