ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.
|頁（從 - 到）||345-349|
|期刊||Applied Physics A: Materials Science and Processing|
|出版狀態||Published - 2006 八月 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)