摘要
ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900°C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500°C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500°C and reached a maximum intensity at 900°C. The possible mechanisms for visible-light emission are discussed.
原文 | English |
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頁(從 - 到) | 345-349 |
頁數 | 5 |
期刊 | Applied Physics A: Materials Science and Processing |
卷 | 84 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 2006 8月 |
All Science Journal Classification (ASJC) codes
- 一般化學
- 一般材料科學