The fabrication of MaTiO3 thin films on n-type Si(100) substrates by rf magnetron sputtering by using synthesized MgTiO3 target was discussed. It was observed that it was possible to obtain highly oriented MgTiO3(110) thin film at a rf power density of 7.7 W/cm 2 and a substrate temperature of 400°C, which was much lower than the bulk sintering temperature. The determination of the microstructure and surface morphology of the MgTiO3 films deposited in Si(100) by X-ray diffraction (XRD), scanning electron microscopy and atomic force microscopy, was also presented. It was found that the grain size of the film increased with an increase in the rf power density and substrate temperature.
|頁（從 - 到）||2440-2445|
|期刊||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版狀態||Published - 2004 十一月 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films