Structure and electrical properties of MgTiO3 thin films deposited by rf magnetron sputtering

Cheng Liang Huang, Chung Long Pan

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The fabrication of MaTiO3 thin films on n-type Si(100) substrates by rf magnetron sputtering by using synthesized MgTiO3 target was discussed. It was observed that it was possible to obtain highly oriented MgTiO3(110) thin film at a rf power density of 7.7 W/cm 2 and a substrate temperature of 400°C, which was much lower than the bulk sintering temperature. The determination of the microstructure and surface morphology of the MgTiO3 films deposited in Si(100) by X-ray diffraction (XRD), scanning electron microscopy and atomic force microscopy, was also presented. It was found that the grain size of the film increased with an increase in the rf power density and substrate temperature.

原文English
頁(從 - 到)2440-2445
頁數6
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
22
發行號6
DOIs
出版狀態Published - 2004 十一月 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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