TY - GEN
T1 - Structure of GaAsN alloy within miscibility gap
AU - Wu, Hong Ming
AU - Lin, Kuang I.
AU - Lin, Hao Hsiung
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/8/12
Y1 - 2016/8/12
N2 - We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.
AB - We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.
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U2 - 10.1109/ISNE.2016.7543310
DO - 10.1109/ISNE.2016.7543310
M3 - Conference contribution
AN - SCOPUS:84985916056
T3 - 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
BT - 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th International Symposium on Next-Generation Electronics, ISNE 2016
Y2 - 4 May 2016 through 6 May 2016
ER -