Structure of GaAsN alloy within miscibility gap

Hong Ming Wu, Kuang I. Lin, Hao Hsiung Lin

研究成果: Conference contribution

摘要

We report on the structural and electronic properties of a series of GaAs1-xNx with wide x range. The alloys were grown on (001) GaAs substrate using plasma-assisted molecular beam epitaxy. Transmission electron microscopy and selective area electron diffraction (SAD) were used to probe the crystalline of GaAs0.496N0.504 sample. The results indicate that the alloy is polycrystalline and amorphous. In the polycrystalline observed zinc-blende (ZB) and hexagonal structure. In this result, we suggest generation of miscibility and phase separation from two kind of structure. Calculation the vertical and horizontal lattice constant with x in the range from 0.106-0.848. Observed the az is dramatic drop with increase N content and axy slow decrease, we suggest this result relation of nitrogen cluster alone [001] and residual horizontal substrate strain. Photo-modulated reflectance spectroscopy was used to determine the energy gap of the GaAs1-xNx alloys, which ranges from 0.7-2.0 eV, covering a large part of the solar spectrum. The energy gap is in agreement with BAC model.

原文English
主出版物標題2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509024391
DOIs
出版狀態Published - 2016 8月 12
事件5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan
持續時間: 2016 5月 42016 5月 6

出版系列

名字2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

Other

Other5th International Symposium on Next-Generation Electronics, ISNE 2016
國家/地區Taiwan
城市Hsinchu
期間16-05-0416-05-06

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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