Studies of interdiffusion in Ge_mSi_n strained layer superlattices

We present the results on the characterization and interdiffusion behavior of Ge _m Si _n strained layer superlattices (SLS's) composed of alternating monolayers of pure Ge and pure Si. Such Ge _m Si _n SLS's were grown on top of thick relaxed Ge _y Si_1-y buffer layers so as to symmetrize the strain distribution and to maintain the pseudomorphic growth of the superlattices. Samples with different superlattice periodicities (i.e. d = d_Ge + d_Si and different layer thickness ratios (i.e. d_Ge:d_Si were prepared for comparison. Raman scattering spectroscopy and x-ray diffraction were used to characterize these samples. Initial results on thermal stability of these Ge _m Si _n SLS's are also reported