Studies of organic complementary inverters with pentacene and PTCDI-C 13H27

Bo Liang Yeh, Bo-Yuan-Sun, Tzu Hsiu Chou, Yu Hao Chen, Jr Wei Lin, Horng Long Cheng, Wei Yang Chou, Henry J.H. Chen, Fu Ching Tang, Bo Heng Liou

研究成果: Conference contribution

摘要

We used the p-channel pentacene and n-channel PTCDI-C13H 27 thin film transistors (OTFTs) to compose an organic complementary inverter device. In the experiment this device was inserted a polyimide (PI) layer into the interface of a semiconductor and gate insulator to improve the orientation phase and decrease the leakage current for n- and p-type OTFTs simultaneously. The hysteresis behavior of the transistors and inverters exhibited high trapping and detrapping speeds for the traps between gate dielectric and semiconductor layers; therefore, the PI layer had functions for improving surface roughness and reducing the hysteresis behavior of gate-dielectrics. The hysteresis of pentacene and PTCDI-C13H 27 films with PI layer was smaller than that without PI obtained by capacitance-voltage measurements. Therefore, the p-type and n-type OTFTs with PI as modification layer had high field-effect mobility of 0.976 and 0.512 cm 2V-1s-1, on/off ratio of 1.7×10 5 and 7×104, threshold voltage of -10.76 and 12.21 V, respectively; by contrast, poor performance occurred in the device without PI layer. Additionally, a good performance for the organic inverter was achieved when pentacene and PTCDI-C13H27 films grown on the PI layer exhibited the match of surface energy between the semiconductor and PI and the large grain size. An organic complementary metal oxide semiconductor (O-CMOS) device had similar drain current, threshold voltage and mobility for n-type and p-type transistors by using the PI layer as surface modification of the dielectric layer. Compared with the device without the PI layer, there were higher noise margins and gains and lower power dissipation of the O-CMOS.

原文English
主出版物標題Organic Field-Effect Transistors VIII
DOIs
出版狀態Published - 2009
事件Organic Field-Effect Transistors VIII - San Diego, CA, United States
持續時間: 2009 八月 32009 八月 5

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7417
ISSN(列印)0277-786X

Other

OtherOrganic Field-Effect Transistors VIII
國家/地區United States
城市San Diego, CA
期間09-08-0309-08-05

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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