Studies of surface state densities of semiconductors by room-temperature photoreflectance

J. S. Hwang, Shih-hui Chang

研究成果: Conference article同行評審

摘要

In this study, we develop a novel approach to determine the surface Fermi level and the surface state densities of semiconductors. The built-in electric field and thus the surface barrier height are evaluated from the Franz-Keldysh oscillations in the PR spectra. Based on the thermionic-emission theory and current-transport theory, the surface state density as well as the pinning position of the surface Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.

原文English
頁(從 - 到)213-218
頁數6
期刊Materials Research Society Symposium - Proceedings
573
出版狀態Published - 1999 一月 1
事件Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, USA
持續時間: 1999 四月 51999 四月 7

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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