Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

J. S. Hwang, H. G. Lin, K. I. Lin, T. S. Wang, Y. T. Lu

研究成果: Conference contribution

摘要

THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

原文English
主出版物標題International Quantum Electronics Conference 2005
頁面1338-1339
頁數2
DOIs
出版狀態Published - 2005 十二月 1

出版系列

名字IQEC, International Quantum Electronics Conference Proceedings
2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • 引用此

    Hwang, J. S., Lin, H. G., Lin, K. I., Wang, T. S., & Lu, Y. T. (2005). Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors. 於 International Quantum Electronics Conference 2005 (頁 1338-1339). [1561093] (IQEC, International Quantum Electronics Conference Proceedings; 卷 2005). https://doi.org/10.1109/IQEC.2005.1561093