Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

J. S. Hwang; H. G. Lin; K. I. Lin; T. S. Wang; Y. T. Lu

doi:10.1109/IQEC.2005.1561093

Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N⁺ structures and the critical electric fields of semiconductors

J. S. Hwang, H. G. Lin, K. I. Lin, T. S. Wang, Y. T. Lu

研究成果: Conference contribution

摘要

THz radiation from series of GaAs and InAlAs surface intrinsic-N ⁺ (SIN⁺) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN⁺ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

原文	English
主出版物標題	International Quantum Electronics Conference 2005
頁面	1338-1339
頁數	2
DOIs	https://doi.org/10.1109/IQEC.2005.1561093
出版狀態	Published - 2005

出版系列

名字	IQEC, International Quantum Electronics Conference Proceedings
卷	2005

All Science Journal Classification (ASJC) codes

一般物理與天文學

存取文件

10.1109/IQEC.2005.1561093

其它文件與鏈接

引用此

Hwang, J. S., Lin, H. G., Lin, K. I., Wang, T. S., & Lu, Y. T. (2005). Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N⁺ structures and the critical electric fields of semiconductors. 於 International Quantum Electronics Conference 2005 (頁 1338-1339). 文章 1561093 (IQEC, International Quantum Electronics Conference Proceedings; 卷 2005). https://doi.org/10.1109/IQEC.2005.1561093

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title = "Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors",

abstract = "THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.",

author = "Hwang, {J. S.} and Lin, {H. G.} and Lin, {K. I.} and Wang, {T. S.} and Lu, {Y. T.}",

year = "2005",

doi = "10.1109/IQEC.2005.1561093",

language = "English",

isbn = "078039240X",

series = "IQEC, International Quantum Electronics Conference Proceedings",

pages = "1338--1339",

booktitle = "International Quantum Electronics Conference 2005",

}

Hwang, JS, Lin, HG, Lin, KI, Wang, TS & Lu, YT 2005, Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N⁺ structures and the critical electric fields of semiconductors. 於 International Quantum Electronics Conference 2005., 1561093, IQEC, International Quantum Electronics Conference Proceedings, 卷 2005, 頁 1338-1339. https://doi.org/10.1109/IQEC.2005.1561093

Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N⁺ structures and the critical electric fields of semiconductors. / Hwang, J. S.; Lin, H. G.; Lin, K. I. 等.
International Quantum Electronics Conference 2005. 2005. p. 1338-1339 1561093 (IQEC, International Quantum Electronics Conference Proceedings; 卷 2005).

研究成果: Conference contribution

TY - GEN

T1 - Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

AU - Hwang, J. S.

AU - Lin, H. G.

AU - Lin, K. I.

AU - Wang, T. S.

AU - Lu, Y. T.

PY - 2005

Y1 - 2005

N2 - THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

AB - THz radiation from series of GaAs and InAlAs surface intrinsic-N + (SIN+) structures with the built-in electric field as bias is studied. When the bias exceeds the so-called critical electric field, the amplitude of THz waves radiated is independent of the built-in electric field. However, the THz amplitude is proportional to the number of photo-excited free charged carriers and thus the thickness of the intrinsic layer of the SIN+ structures. The critical electric field determined from the THz amplitude as a function of the electric field may be useful in estimating the F to L valley splitting in semiconductors.

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