TY - JOUR
T1 - Study of a Palladium (Pd)/Aluminum-Doped Zinc Oxide (AZO) Hydrogen Sensor and the Kalman Algorithm for Internet-of-Things (IoT) Application
AU - Chen, Wei Cheng
AU - Niu, Jing Shiuan
AU - Liu, I. Ping
AU - Chi, Cheng Yu
AU - Cheng, Shiou Ying
AU - Lin, Kun Wei
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received June 17, 2020; revised July 27, 2020; accepted August 14, 2020. Date of publication September 4, 2020; date of current version September 22, 2020. This work was supported by the Ministry of Science and Technology under Contract MOST 109-2221-E-006-083-MY2. The review of this article was arranged by Editor I. Kymissis. (Corresponding author: Wen-Chau Liu.) Wei-Cheng Chen, Jing-Shiuan Niu, Cheng-Yu Chi, and Wen-Chau Liu are with the Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan (e-mail: wcliu@mail.ncku.edu.tw).
Funding Information:
This work was supported by the Ministry of Science and Technology under Contract MOST 109-2221-E-006-083-MY2.
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2020/10
Y1 - 2020/10
N2 - A palladium (Pd) thin film is decorated on a radio frequency (RF) sputtered aluminum-doped zinc oxide (AZO) thin film to produce a hydrogen sensor. Due to the catalytic activity of the Pd metal, the studied thin film-based device shows remarkably enhanced hydrogen-sensing characteristics. Experimentally, a very high sensing response of $1.12\times 10 ^{4}$ with a response time of 23 s is obtained under 1% H2/air gas at 300 °C. Furthermore, even under an extremely low concentration of 40-ppb H2/air, a sensing response of 0.17 is acquired. The optimal operating temperature of the studied device is 300 °C. A hypothesis is used to interpret the related hydrogen-sensing mechanism of the studied device. A thermodynamic analysis is employed to study the surface coverage of hydrogen molecules on the device's surface. Furthermore, for the application in wireless transmission of the Internet of Things (IoT), an interesting Kalman algorithm is used to reduce redundant data, save hardware costs, and reduce network congestion. The simulated results show that 93.9% of the redundant data can be removed. The studied device exhibits advantages of a simple structure, easy fabrication, low cost, a widespread sensing range of hydrogen concentration, a very high sensing response, and an extremely low detecting limit, as well as being suitable for IoT application.
AB - A palladium (Pd) thin film is decorated on a radio frequency (RF) sputtered aluminum-doped zinc oxide (AZO) thin film to produce a hydrogen sensor. Due to the catalytic activity of the Pd metal, the studied thin film-based device shows remarkably enhanced hydrogen-sensing characteristics. Experimentally, a very high sensing response of $1.12\times 10 ^{4}$ with a response time of 23 s is obtained under 1% H2/air gas at 300 °C. Furthermore, even under an extremely low concentration of 40-ppb H2/air, a sensing response of 0.17 is acquired. The optimal operating temperature of the studied device is 300 °C. A hypothesis is used to interpret the related hydrogen-sensing mechanism of the studied device. A thermodynamic analysis is employed to study the surface coverage of hydrogen molecules on the device's surface. Furthermore, for the application in wireless transmission of the Internet of Things (IoT), an interesting Kalman algorithm is used to reduce redundant data, save hardware costs, and reduce network congestion. The simulated results show that 93.9% of the redundant data can be removed. The studied device exhibits advantages of a simple structure, easy fabrication, low cost, a widespread sensing range of hydrogen concentration, a very high sensing response, and an extremely low detecting limit, as well as being suitable for IoT application.
UR - http://www.scopus.com/inward/record.url?scp=85092078649&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85092078649&partnerID=8YFLogxK
U2 - 10.1109/TED.2020.3018084
DO - 10.1109/TED.2020.3018084
M3 - Article
AN - SCOPUS:85092078649
SN - 0018-9383
VL - 67
SP - 4405
EP - 4412
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
M1 - 9186844
ER -