Study of Cu-based Al-doped ZnO multilayer thin films with different annealing conditions

Chien Hsun Chu, Hung Wei Wu, Jow Lay Huang

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

AZO/Cu/AZO multilayer thin films produced under different annealing conditions are studied in this paper, to examine the effects of atmosphere and annealing temperature on their optical and electrical properties. The multilayer thin films are prepared by simultaneous RF magnetron sputtering (for AZO) and DC magnetron sputtering (for Cu). The thin films were annealed in a vacuum or an atmosphere of oxygen at temperatures ranging from 100 to 400 °C in steps of 100 °C for 3 min. High-quality multilayer films (at Cu layer thickness of 15 nm) with resistivity of 1.99×10-5 Ω-cm and maximum optical transmittance of 76.23% were obtained at 400 °C annealing temperature in a vacuum. These results show the films to be good candidates for use as high quality electrodes in various displays applications.

原文English
頁(從 - 到)5754-5761
頁數8
期刊Ceramics International
42
發行號5
DOIs
出版狀態Published - 2016 4月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 陶瓷和複合材料
  • 製程化學與技術
  • 表面、塗料和薄膜
  • 材料化學

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