Study of delta-doping concentration effect on a novel quantum-well HEMT structure

Ching Yuan Cheng, Shui-Jinn Wang, Jia Chuan Lin, Ying Che Luo

研究成果: Paper

摘要

In this work, theoretical analysis for a high current density and high transconductance quantum-well HEMT with a double-side delta-doping layers structure is presented. The present calculation is based on a numerical self-consistent solutions of Poisson's and Schrodinger's equations by assuming charge neutrality over the entire device. From the calculated results, physical details of current density and transconductance are evaluated and discussed. An optimum structure with a double delta-doping concentration of 5×1012 cm-2 and 1013 cm-2 are proposed.

原文English
頁面209-212
頁數4
出版狀態Published - 1997 一月 1
事件Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
持續時間: 1996 十一月 261996 十一月 28

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
城市Penang, Malaysia
期間96-11-2696-11-28

指紋

Transconductance
High electron mobility transistors
Semiconductor quantum wells
Current density
Doping (additives)
Schrodinger equation
Poisson equation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Cheng, C. Y., Wang, S-J., Lin, J. C., & Luo, Y. C. (1997). Study of delta-doping concentration effect on a novel quantum-well HEMT structure. 209-212. 論文發表於 Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .
Cheng, Ching Yuan ; Wang, Shui-Jinn ; Lin, Jia Chuan ; Luo, Ying Che. / Study of delta-doping concentration effect on a novel quantum-well HEMT structure. 論文發表於 Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .4 p.
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Cheng, CY, Wang, S-J, Lin, JC & Luo, YC 1997, 'Study of delta-doping concentration effect on a novel quantum-well HEMT structure', 論文發表於 Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, 96-11-26 - 96-11-28 頁 209-212.

Study of delta-doping concentration effect on a novel quantum-well HEMT structure. / Cheng, Ching Yuan; Wang, Shui-Jinn; Lin, Jia Chuan; Luo, Ying Che.

1997. 209-212 論文發表於 Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .

研究成果: Paper

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Cheng CY, Wang S-J, Lin JC, Luo YC. Study of delta-doping concentration effect on a novel quantum-well HEMT structure. 1997. 論文發表於 Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .