TY - JOUR
T1 - Study of diffusion barriers for Au metal on liquid phase oxidized GaAs
AU - Sze, Po Wen
AU - Huang, Jian Jiun
AU - Chou, Dei Wei
AU - Wang, Yeong Her
N1 - Funding Information:
This work was supported in part by the National Science Council of Taiwan under Contract Nos. NSC94-2215-E-224-002 and NSC 94-2215-E-006-001 and the Ministry of Education (MOE) Program for Promoting Academic Excellence of Universities under Grant No. A-91E-FA08-1-4. Likewise, due acknowledgement is also made to the Foundation of Chen, Jieh-Chen Scholarship of Tainan, Taiwan.
PY - 2006
Y1 - 2006
N2 - TiW, TiN, Pd, and Mo as the diffusion barriers (DBs) in Au/DB/GaAs native oxide multilayer structures are investigated. The GaAs native oxides are prepared by liquid phase oxidation, and the results indicate that TiW and Mo films can effectively block Au diffusion at temperatures of up to 550 °C for 30 min. However, TiN and Pd films can effectively block Au diffusion only at 450 °C for 30 min. The failure of TiN and Pd appears related to the embedded oxygen in the barrier layers which cause the interdiffusion between Au and the barrier films. In comparison, TiW and Mo show better blocking properties that prevent Au from diffusing into oxide films. They also act as a diffusion barrier even at temperatures above 550 °C.
AB - TiW, TiN, Pd, and Mo as the diffusion barriers (DBs) in Au/DB/GaAs native oxide multilayer structures are investigated. The GaAs native oxides are prepared by liquid phase oxidation, and the results indicate that TiW and Mo films can effectively block Au diffusion at temperatures of up to 550 °C for 30 min. However, TiN and Pd films can effectively block Au diffusion only at 450 °C for 30 min. The failure of TiN and Pd appears related to the embedded oxygen in the barrier layers which cause the interdiffusion between Au and the barrier films. In comparison, TiW and Mo show better blocking properties that prevent Au from diffusing into oxide films. They also act as a diffusion barrier even at temperatures above 550 °C.
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U2 - 10.1116/1.2366545
DO - 10.1116/1.2366545
M3 - Article
AN - SCOPUS:33845238242
SN - 1071-1023
VL - 24
SP - 2640
EP - 2644
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 6
ER -