The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.
|期刊||Japanese journal of applied physics|
|發行號||4 PART 2|
|出版狀態||Published - 2009 4月|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)