Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

Po Chin Huang; Ting Kuo Kang; Bo Chin Wang; San Lein Wu; Shoou Jinn Chang

doi:10.1143/JJAP.48.04C038

Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

Po Chin Huang, Ting Kuo Kang, Bo Chin Wang, San Lein Wu, Shoou Jinn Chang

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.

原文	English
文章編號	04C038
期刊	Japanese journal of applied physics
卷	48
發行號	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.04C038
出版狀態	Published - 2009 4月

All Science Journal Classification (ASJC) codes

工程 (全部)
物理與天文學 (全部)

存取文件

10.1143/JJAP.48.04C038

其它文件與鏈接

引用此

@article{ddbc96e74afd4f5489b5df76750776f9,

title = "Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors",

abstract = "The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.",

author = "Huang, {Po Chin} and Kang, {Ting Kuo} and Wang, {Bo Chin} and Wu, {San Lein} and Chang, {Shoou Jinn}",

year = "2009",

month = apr,

doi = "10.1143/JJAP.48.04C038",

language = "English",

volume = "48",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "4 PART 2",

}

TY - JOUR

T1 - Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

AU - Huang, Po Chin

AU - Kang, Ting Kuo

AU - Wang, Bo Chin

AU - Wu, San Lein

AU - Chang, Shoou Jinn

PY - 2009/4

Y1 - 2009/4

N2 - The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.

AB - The impact ionization phenomenon in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.

UR - http://www.scopus.com/inward/record.url?scp=77952496938&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952496938&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.04C038

DO - 10.1143/JJAP.48.04C038

M3 - Article

AN - SCOPUS:77952496938

SN - 0021-4922

VL - 48

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

M1 - 04C038

ER -

Study of enhanced impact ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此