Study of hole transport through minibands in symmetrically strained GexSi1-x/Si superlattices

J. S. Park, R. P.G. Karunasiri, K. L. Wang

研究成果: Article同行評審

摘要

The hole transport through the minibands of symmetrically strained GexSi1-x/Si superlattices is observed. The superlattices are grown on unstrained Ge x 2Si1- x 2/Si buffer layers. Two peaks are observed from the current-voltage (I-V) and conductance-voltage (dI/dV) measurements, which are due to conduction of light holes through minibands in the superlattice. The second peak shows a negative differential resistance (NDR) region below 100 K. The energies of the minibands are estimated by thermionic emission analysis of current-voltage-temperature (I-V-T) data. Also, we have studied the long wavelength (10 μm) infrared absorption of these superlattice samples by photocurrent measurement. The measured photocurrent as a function of bias shows characteristics similar to the I-V characteristics. The preliminary data on polarization dependence of the photocurrent suggest that the infrared absorption occurs between lighth hole minibands.

原文English
頁(從 - 到)25-31
頁數7
期刊Thin Solid Films
183
發行號1-2
DOIs
出版狀態Published - 1989 12月 30

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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