Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Chin Chuan Cheng, Yan Ying Tsai, Kun Wei Lin, Huey Ing Chen, Wei Hsi Hsu, Ching Wen Hong, Han Lien Lin, Wen Chau Liu

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide- Al0.24 Ga0.76 As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14 ppm H2 /air, the studied device shows significant drain current variation (about 0.12 mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes.

原文English
頁(從 - 到)1943-1947
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
23
發行號5
DOIs
出版狀態Published - 2005

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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