Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors

Kuo Hui Yu; Kun Wei Lin; Kuan Po Lin; Chih Hung Yen; Ckih Kai Wang; Wen Chau Liu

doi:10.1116/1.1481862

Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors

Kuo Hui Yu, Kun Wei Lin, Kuan Po Lin, Chih Hung Yen, Ckih Kai Wang, Wen Chau Liu

微電子工程研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistor was studied. The heterostructure channel and heavily doped p⁺-InGaP layer was added to increase the barrier height and carrier confinement. The fabrication of the device without the high-barrier gate structure was done for comparison to investigate the effect of high-barrier gate structure on device characteristics.

原文	English
頁（從 - 到）	1096-1101
頁數	6
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	20
發行號	3
DOIs	https://doi.org/10.1116/1.1481862
出版狀態	Published - 2002 5月

All Science Journal Classification (ASJC) codes

凝聚態物理學
電氣與電子工程

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10.1116/1.1481862

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abstract = "A InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistor was studied. The heterostructure channel and heavily doped p+-InGaP layer was added to increase the barrier height and carrier confinement. The fabrication of the device without the high-barrier gate structure was done for comparison to investigate the effect of high-barrier gate structure on device characteristics.",

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AU - Yu, Kuo Hui

AU - Lin, Kun Wei

AU - Lin, Kuan Po

AU - Yen, Chih Hung

AU - Wang, Ckih Kai

AU - Liu, Wen Chau

PY - 2002/5

Y1 - 2002/5

N2 - A InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistor was studied. The heterostructure channel and heavily doped p+-InGaP layer was added to increase the barrier height and carrier confinement. The fabrication of the device without the high-barrier gate structure was done for comparison to investigate the effect of high-barrier gate structure on device characteristics.

AB - A InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistor was studied. The heterostructure channel and heavily doped p+-InGaP layer was added to increase the barrier height and carrier confinement. The fabrication of the device without the high-barrier gate structure was done for comparison to investigate the effect of high-barrier gate structure on device characteristics.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors

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