A InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistor was studied. The heterostructure channel and heavily doped p+-InGaP layer was added to increase the barrier height and carrier confinement. The fabrication of the device without the high-barrier gate structure was done for comparison to investigate the effect of high-barrier gate structure on device characteristics.
|頁（從 - 到）||1096-1101|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 2002 5月|
All Science Journal Classification (ASJC) codes