Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

Chang Da Tsai, Ching Hung Fu, Yow Jon Lin, Ching Ting Lee

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.

原文English
頁(從 - 到)665-670
頁數6
期刊Solid-State Electronics
43
發行號3
DOIs
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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