TY - JOUR
T1 - Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)
AU - Chuang, Hung Ming
AU - Cheng, Shiou Ying
AU - Lai, Po Hsien
AU - Liao, Xin Da
AU - Chen, Chun Yuan
AU - Yen, Chih Hung
AU - Liu, Rong Chau
AU - Liu, Wen Chau
PY - 2004/1
Y1 - 2004/1
N2 - InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs) with δ-doped channels and uniformly doped channels are comprehensively studied and demonstrated. From the simulation results, based on a two-dimensional simulator of Atlas, the band diagrams, DC and RF characteristics of studied devices are compared and studied. The better drain current drivability, higher transconductance and microwave performances are obtained in the studied device with δ-doped channel. In addition, experimentally, the DDCHFET with δ-doped quantum well channel is fabricated successfully. Due to the employed InGaAs double δ-doped channel structure and Schottky behaviours of InGaP 'insulator', good DC properties including pinch-off and saturation characteristics, higher and linear transconductance, and good RF properties are obtained. Moreover, the experimental results are consistent with simulated data.
AB - InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs) with δ-doped channels and uniformly doped channels are comprehensively studied and demonstrated. From the simulation results, based on a two-dimensional simulator of Atlas, the band diagrams, DC and RF characteristics of studied devices are compared and studied. The better drain current drivability, higher transconductance and microwave performances are obtained in the studied device with δ-doped channel. In addition, experimentally, the DDCHFET with δ-doped quantum well channel is fabricated successfully. Due to the employed InGaAs double δ-doped channel structure and Schottky behaviours of InGaP 'insulator', good DC properties including pinch-off and saturation characteristics, higher and linear transconductance, and good RF properties are obtained. Moreover, the experimental results are consistent with simulated data.
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U2 - 10.1088/0268-1242/19/1/015
DO - 10.1088/0268-1242/19/1/015
M3 - Article
AN - SCOPUS:0345866737
SN - 0268-1242
VL - 19
SP - 87
EP - 92
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 1
ER -