Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor

Wei Chou Wang, Jing Yuh Chen, Hsi Jen Pan, Shun Ching Feng, Kuo Hui Yu, Wen Chau Liu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A lattice-matched In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor, prepared by low-pressure metal organic chemical vapor deposition (LP-MOCVD), is fabricated successfully and reported. Due to the insertion of δ-doped sheets and setback layers both at base-emitter (B-E) and base-collector (B-C) heterojunctions, the potential spikes are suppressed significantly. In addition, the electron blocking effect is removed and a dramatic improvement of current gain is obtained. A modified Ebers-Moll model is employed to study and analyse the device performances. The experimental results show that the common-emitter current gain over 210 at the collector current of 35 mA and an offset voltage Δ VCE smaller than 50 mV are obtained. Also, a lower knee-shaped voltage of 1.4 V at the collector current of 40 mA is observed. These results indicate that the device studied is a good candidate for high-speed and high-power circuit applications.

原文English
頁(從 - 到)23-33
頁數11
期刊Superlattices and Microstructures
26
發行號1
DOIs
出版狀態Published - 1999 7月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

指紋

深入研究「Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P double δ-doped heterojunction bipolar transistor」主題。共同形成了獨特的指紋。

引用此