Study of molecular-beam epitaxially grown GexSi1-x/Si layers by Raman scattering

S. J. Chang, M. A. Kallel, K. L. Wang, R. C. Bowman, Peter Chow

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The strain distribution of a GexSi1-x/Si strained layer superlattice (SLS) as a function of the distance from the superlattice/substrate interface has been studied by Raman spectroscopy. A small-angle bevel was made by angle lapping on a given thick Ge xSi1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the substrate interface, the compression strain in the alloy layers decreases while the tensile strain in the Si layers increases. From linewidth measurement of the Raman peaks, it appears that there is an improved crystal quality and a lower concentration of defects going away from the substrate interface.

原文English
頁(從 - 到)3634-3636
頁數3
期刊Journal of Applied Physics
64
發行號7
DOIs
出版狀態Published - 1988

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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