Study of phonons in self-organized multiple Ge quantum dots

J. L. Liu, G. Jin, Y. S. Tang, Y. H. Luo, Y. Lu, K. L. Wang, D. P. Yu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Raman scattering measurements were carried out in a self-organized multi-layered Ge quantum dot sample, which was grown using solid-source molecular-beam epitaxy, and consisted of 25 periods of 20-angstroms-high Ge quantum dots sandwiched by 20-nm Si spacers. The Ge-Ge optical phonon mode was found at 298.2 cm-1, which was tuned by the phonon confinement and strain effects. Acoustic phonons related to Ge quantum dots have also been demonstrated.

原文English
頁(從 - 到)554-556
頁數3
期刊Journal of Electronic Materials
29
發行號5
DOIs
出版狀態Published - 2000 5月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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