Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode

Yi Sheng Lin, Wei-Yang Chou, Lin Ni Chen, Yao Chien Cheng, Horng-Long Cheng, Shyh Jiun Liu, Fu-Ching Tang, Chia Te Yen

研究成果: Conference contribution

摘要

A n-type organic semiconductor, N,N'-didodecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C12H25), film crystallizes on various temperature substrates to act as active layer of organic thin-film transistors (OTFTs). The nuclear magnetic resonance 1-D hydrogen spectroscopy (1H-NMR) was used to analyze molecular structure of the PTCDI-C 12H25 which was synthesized by us. When the transistors was fabricated on room temperature substrate, the field-effect mobility of the device was about half of that of the transistor fabricated on high temperature substrate. Furthermore, x-ray diffraction analysis gave an account that the higher temperature substrate provided better epitaxial environment for PTCDI-C12H25 thin film growth. The grain size of PTCDI-C12H25 thin films deposited on room temperature and 100 °C substrates were 24.8 and 35.6 nm, respectively, which analyzed by paracrystalline theory. We base that larger grain results in better carrier transport in organic films on the grain boundary model which assumed that the boundary of grain will trap charge carriers when they pass through these grains, and the quality differences of microstructural within a grain can be neglected. The PTCDI-C12H25 based OTFTs were achieved high performances, such as field-effect mobility of 0.10 cm2V -1s-1, threshold voltage 14.5 V, on-off ratio 3.01 × 106 and subthreshold swing 1.24 V/dec, when the active layer was grown under substrate temperature of 100 °C. Additionally, contact resistance analysis reveals that PTCDI-C12H25 thin film on 100 °C substrate has better interface between organic thin film and electrode.

原文English
主出版物標題Organic Field-Effect Transistors IX
DOIs
出版狀態Published - 2010 十月 22
事件Organic Field-Effect Transistors IX - San Diego, CA, United States
持續時間: 2010 八月 22010 八月 4

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7778
ISSN(列印)0277-786X

Other

OtherOrganic Field-Effect Transistors IX
國家United States
城市San Diego, CA
期間10-08-0210-08-04

指紋

Thin-film Transistor
Thin film transistors
Electrode
transistors
Substrate
Contact
Electrodes
electrodes
Substrates
thin films
Thin Films
Thin films
Temperature
Transistors
Perylene
Nuclear magnetic resonance
Organic Semiconductors
Contact Resistance
nuclear magnetic resonance
n-type semiconductors

All Science Journal Classification (ASJC) codes

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

引用此文

Lin, Y. S., Chou, W-Y., Chen, L. N., Cheng, Y. C., Cheng, H-L., Liu, S. J., ... Yen, C. T. (2010). Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode. 於 Organic Field-Effect Transistors IX [77781E] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7778). https://doi.org/10.1117/12.860506
Lin, Yi Sheng ; Chou, Wei-Yang ; Chen, Lin Ni ; Cheng, Yao Chien ; Cheng, Horng-Long ; Liu, Shyh Jiun ; Tang, Fu-Ching ; Yen, Chia Te. / Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode. Organic Field-Effect Transistors IX. 2010. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{53ccc5eaf7f34395ba349c4703181309,
title = "Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode",
abstract = "A n-type organic semiconductor, N,N'-didodecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C12H25), film crystallizes on various temperature substrates to act as active layer of organic thin-film transistors (OTFTs). The nuclear magnetic resonance 1-D hydrogen spectroscopy (1H-NMR) was used to analyze molecular structure of the PTCDI-C 12H25 which was synthesized by us. When the transistors was fabricated on room temperature substrate, the field-effect mobility of the device was about half of that of the transistor fabricated on high temperature substrate. Furthermore, x-ray diffraction analysis gave an account that the higher temperature substrate provided better epitaxial environment for PTCDI-C12H25 thin film growth. The grain size of PTCDI-C12H25 thin films deposited on room temperature and 100 °C substrates were 24.8 and 35.6 nm, respectively, which analyzed by paracrystalline theory. We base that larger grain results in better carrier transport in organic films on the grain boundary model which assumed that the boundary of grain will trap charge carriers when they pass through these grains, and the quality differences of microstructural within a grain can be neglected. The PTCDI-C12H25 based OTFTs were achieved high performances, such as field-effect mobility of 0.10 cm2V -1s-1, threshold voltage 14.5 V, on-off ratio 3.01 × 106 and subthreshold swing 1.24 V/dec, when the active layer was grown under substrate temperature of 100 °C. Additionally, contact resistance analysis reveals that PTCDI-C12H25 thin film on 100 °C substrate has better interface between organic thin film and electrode.",
author = "Lin, {Yi Sheng} and Wei-Yang Chou and Chen, {Lin Ni} and Cheng, {Yao Chien} and Horng-Long Cheng and Liu, {Shyh Jiun} and Fu-Ching Tang and Yen, {Chia Te}",
year = "2010",
month = "10",
day = "22",
doi = "10.1117/12.860506",
language = "English",
isbn = "9780819482747",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Organic Field-Effect Transistors IX",

}

Lin, YS, Chou, W-Y, Chen, LN, Cheng, YC, Cheng, H-L, Liu, SJ, Tang, F-C & Yen, CT 2010, Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode. 於 Organic Field-Effect Transistors IX., 77781E, Proceedings of SPIE - The International Society for Optical Engineering, 卷 7778, Organic Field-Effect Transistors IX, San Diego, CA, United States, 10-08-02. https://doi.org/10.1117/12.860506

Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode. / Lin, Yi Sheng; Chou, Wei-Yang; Chen, Lin Ni; Cheng, Yao Chien; Cheng, Horng-Long; Liu, Shyh Jiun; Tang, Fu-Ching; Yen, Chia Te.

Organic Field-Effect Transistors IX. 2010. 77781E (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7778).

研究成果: Conference contribution

TY - GEN

T1 - Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode

AU - Lin, Yi Sheng

AU - Chou, Wei-Yang

AU - Chen, Lin Ni

AU - Cheng, Yao Chien

AU - Cheng, Horng-Long

AU - Liu, Shyh Jiun

AU - Tang, Fu-Ching

AU - Yen, Chia Te

PY - 2010/10/22

Y1 - 2010/10/22

N2 - A n-type organic semiconductor, N,N'-didodecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C12H25), film crystallizes on various temperature substrates to act as active layer of organic thin-film transistors (OTFTs). The nuclear magnetic resonance 1-D hydrogen spectroscopy (1H-NMR) was used to analyze molecular structure of the PTCDI-C 12H25 which was synthesized by us. When the transistors was fabricated on room temperature substrate, the field-effect mobility of the device was about half of that of the transistor fabricated on high temperature substrate. Furthermore, x-ray diffraction analysis gave an account that the higher temperature substrate provided better epitaxial environment for PTCDI-C12H25 thin film growth. The grain size of PTCDI-C12H25 thin films deposited on room temperature and 100 °C substrates were 24.8 and 35.6 nm, respectively, which analyzed by paracrystalline theory. We base that larger grain results in better carrier transport in organic films on the grain boundary model which assumed that the boundary of grain will trap charge carriers when they pass through these grains, and the quality differences of microstructural within a grain can be neglected. The PTCDI-C12H25 based OTFTs were achieved high performances, such as field-effect mobility of 0.10 cm2V -1s-1, threshold voltage 14.5 V, on-off ratio 3.01 × 106 and subthreshold swing 1.24 V/dec, when the active layer was grown under substrate temperature of 100 °C. Additionally, contact resistance analysis reveals that PTCDI-C12H25 thin film on 100 °C substrate has better interface between organic thin film and electrode.

AB - A n-type organic semiconductor, N,N'-didodecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C12H25), film crystallizes on various temperature substrates to act as active layer of organic thin-film transistors (OTFTs). The nuclear magnetic resonance 1-D hydrogen spectroscopy (1H-NMR) was used to analyze molecular structure of the PTCDI-C 12H25 which was synthesized by us. When the transistors was fabricated on room temperature substrate, the field-effect mobility of the device was about half of that of the transistor fabricated on high temperature substrate. Furthermore, x-ray diffraction analysis gave an account that the higher temperature substrate provided better epitaxial environment for PTCDI-C12H25 thin film growth. The grain size of PTCDI-C12H25 thin films deposited on room temperature and 100 °C substrates were 24.8 and 35.6 nm, respectively, which analyzed by paracrystalline theory. We base that larger grain results in better carrier transport in organic films on the grain boundary model which assumed that the boundary of grain will trap charge carriers when they pass through these grains, and the quality differences of microstructural within a grain can be neglected. The PTCDI-C12H25 based OTFTs were achieved high performances, such as field-effect mobility of 0.10 cm2V -1s-1, threshold voltage 14.5 V, on-off ratio 3.01 × 106 and subthreshold swing 1.24 V/dec, when the active layer was grown under substrate temperature of 100 °C. Additionally, contact resistance analysis reveals that PTCDI-C12H25 thin film on 100 °C substrate has better interface between organic thin film and electrode.

UR - http://www.scopus.com/inward/record.url?scp=77957983233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957983233&partnerID=8YFLogxK

U2 - 10.1117/12.860506

DO - 10.1117/12.860506

M3 - Conference contribution

AN - SCOPUS:77957983233

SN - 9780819482747

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Organic Field-Effect Transistors IX

ER -

Lin YS, Chou W-Y, Chen LN, Cheng YC, Cheng H-L, Liu SJ 等. Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode. 於 Organic Field-Effect Transistors IX. 2010. 77781E. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.860506