Study of PTCDI-C12H25 based organic thin-film transistors with bottom contact electrode

Yi Sheng Lin, Wei Yang Chou, Lin Ni Chen, Yao Chien Cheng, Horng Long Cheng, Shyh Jiun Liu, Fu Ching Tang, Chia Te Yen

研究成果: Conference contribution

摘要

A n-type organic semiconductor, N,N'-didodecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C12H25), film crystallizes on various temperature substrates to act as active layer of organic thin-film transistors (OTFTs). The nuclear magnetic resonance 1-D hydrogen spectroscopy (1H-NMR) was used to analyze molecular structure of the PTCDI-C 12H25 which was synthesized by us. When the transistors was fabricated on room temperature substrate, the field-effect mobility of the device was about half of that of the transistor fabricated on high temperature substrate. Furthermore, x-ray diffraction analysis gave an account that the higher temperature substrate provided better epitaxial environment for PTCDI-C12H25 thin film growth. The grain size of PTCDI-C12H25 thin films deposited on room temperature and 100 °C substrates were 24.8 and 35.6 nm, respectively, which analyzed by paracrystalline theory. We base that larger grain results in better carrier transport in organic films on the grain boundary model which assumed that the boundary of grain will trap charge carriers when they pass through these grains, and the quality differences of microstructural within a grain can be neglected. The PTCDI-C12H25 based OTFTs were achieved high performances, such as field-effect mobility of 0.10 cm2V -1s-1, threshold voltage 14.5 V, on-off ratio 3.01 × 106 and subthreshold swing 1.24 V/dec, when the active layer was grown under substrate temperature of 100 °C. Additionally, contact resistance analysis reveals that PTCDI-C12H25 thin film on 100 °C substrate has better interface between organic thin film and electrode.

原文English
主出版物標題Organic Field-Effect Transistors IX
DOIs
出版狀態Published - 2010
事件Organic Field-Effect Transistors IX - San Diego, CA, United States
持續時間: 2010 8月 22010 8月 4

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7778
ISSN(列印)0277-786X

Other

OtherOrganic Field-Effect Transistors IX
國家/地區United States
城市San Diego, CA
期間10-08-0210-08-04

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 應用數學
  • 電氣與電子工程
  • 電腦科學應用

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