TY - GEN
T1 - Study of silicon nitride film embedded with silicon quantum dots
AU - Li, Pei Ling
AU - Gau, Chie
AU - Dai, Bau Tong
AU - Liu, Chien Wei
PY - 2011
Y1 - 2011
N2 - This study report the silicon quantum dots that precipitate from silicon rich nitride films by thermal annealed. We examined various annealing conditions on silicon rich nitride films that deposited in the same PECVD deposition program. We could find the sample that went through high annealed temperature and sufficient annealed time, such as annealed at 1000°C for 1 hour, would get better dots size at about 5 nm.
AB - This study report the silicon quantum dots that precipitate from silicon rich nitride films by thermal annealed. We examined various annealing conditions on silicon rich nitride films that deposited in the same PECVD deposition program. We could find the sample that went through high annealed temperature and sufficient annealed time, such as annealed at 1000°C for 1 hour, would get better dots size at about 5 nm.
UR - https://www.scopus.com/pages/publications/80053311172
UR - https://www.scopus.com/pages/publications/80053311172#tab=citedBy
U2 - 10.1109/NEMS.2011.6017438
DO - 10.1109/NEMS.2011.6017438
M3 - Conference contribution
AN - SCOPUS:80053311172
SN - 9781612847757
T3 - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
SP - 646
EP - 649
BT - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
T2 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
Y2 - 20 February 2011 through 23 February 2011
ER -