Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures

P. H. Hor; W. C. Fan; L. S. Chou; R. L. Meng; C. W. Chu; J. M. Tarascon; M. K. Wu

doi:10.1016/0038-1098(85)90722-7

Study of the metal-semiconductor transition in Rb₂Mo₆Se₆, Rb₂Mo₆Te₆ and Cs₂Mo₆Te₆ under pressures

P. H. Hor, W. C. Fan, L. S. Chou, R. L. Meng, C. W. Chu, J. M. Tarascon, M. K. Wu

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研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

The resistance of quasi-one-dimensional single crystals Rb₂Mo₆Se₆, Rb₂Mo₆Te₆ and Cs₂Mo₆Te₆ has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb₂Mo₆Te₆ and Cs₂Mo₆Te₆ exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.

原文	English
頁（從 - 到）	231-235
頁數	5
期刊	Solid State Communications
卷	55
發行號	3
DOIs	https://doi.org/10.1016/0038-1098(85)90722-7
出版狀態	Published - 1985 7月

All Science Journal Classification (ASJC) codes

化學 (全部)
凝聚態物理學
材料化學

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10.1016/0038-1098(85)90722-7

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引用此

@article{f0dfd47ff9514fe79106fac52f9471a7,

title = "Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures",

abstract = "The resistance of quasi-one-dimensional single crystals Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb2Mo6Te6 and Cs2Mo6Te6 exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.",

author = "Hor, {P. H.} and Fan, {W. C.} and Chou, {L. S.} and Meng, {R. L.} and Chu, {C. W.} and Tarascon, {J. M.} and Wu, {M. K.}",

note = "Funding Information: Acknowledgement - Work at Houston is supported in part by the National Science Foundation Low Temperature Physics Program Grant No. DMR-8204173 and the Energy Laboratory of the University of Houston and at Huntsville by the Research Institute of the University of Alabama at Huntsville.",

year = "1985",

month = jul,

doi = "10.1016/0038-1098(85)90722-7",

language = "English",

volume = "55",

pages = "231--235",

journal = "Solid State Communications",

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TY - JOUR

T1 - Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures

AU - Hor, P. H.

AU - Fan, W. C.

AU - Chou, L. S.

AU - Meng, R. L.

AU - Chu, C. W.

AU - Tarascon, J. M.

AU - Wu, M. K.

N1 - Funding Information: Acknowledgement - Work at Houston is supported in part by the National Science Foundation Low Temperature Physics Program Grant No. DMR-8204173 and the Energy Laboratory of the University of Houston and at Huntsville by the Research Institute of the University of Alabama at Huntsville.

PY - 1985/7

Y1 - 1985/7

N2 - The resistance of quasi-one-dimensional single crystals Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb2Mo6Te6 and Cs2Mo6Te6 exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.

AB - The resistance of quasi-one-dimensional single crystals Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb2Mo6Te6 and Cs2Mo6Te6 exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.

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U2 - 10.1016/0038-1098(85)90722-7

DO - 10.1016/0038-1098(85)90722-7

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AN - SCOPUS:0022097770

VL - 55

SP - 231

EP - 235

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 3

ER -

Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures

摘要

All Science Journal Classification (ASJC) codes

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其它文件與鏈接

指紋

引用此

Study of the metal-semiconductor transition in Rb₂Mo₆Se₆, Rb₂Mo₆Te₆ and Cs₂Mo₆Te₆ under pressures