Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures

P. H. Hor, W. C. Fan, L. S. Chou, R. L. Meng, C. W. Chu, J. M. Tarascon, M. K. Wu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The resistance of quasi-one-dimensional single crystals Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb2Mo6Te6 and Cs2Mo6Te6 exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.

原文English
頁(從 - 到)231-235
頁數5
期刊Solid State Communications
55
發行號3
DOIs
出版狀態Published - 1985 七月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學

指紋

深入研究「Study of the metal-semiconductor transition in Rb<sub>2</sub>Mo<sub>6</sub>Se<sub>6</sub>, Rb<sub>2</sub>Mo<sub>6</sub>Te<sub>6</sub> and Cs<sub>2</sub>Mo<sub>6</sub>Te<sub>6</sub> under pressures」主題。共同形成了獨特的指紋。

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