Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures

Wei Chou Wang, Hsi Jen Pan, Kuo Hui Yu, Kun Wei Lin, Jung Hui Tsai, Shiou Ying Cheng, Wen Chau Liu

研究成果: Article同行評審

摘要

In this paper, we demonstrate multiple-negative-differential-resistance (MNDR) switching behaviors based on the InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) and InGaAlAs/InP heterojunction bipolar transistor (HBT) structures. The devices act like conventional HBTs under forward operation mode. The proposed HEBTs show lower offset voltage due to the correct design of the emitter thickness. On the other hand, MNDR phenomena resulting from avalanche multiplication, confinement effects and the potential redistribution process are observed under inverted operation mode for both devices. In addition, three-terminal NDR characteristics are investigated under the applied base current IB. Moreover, for the InGaAlAs/InP HBT, anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77 K are observed due to the insertion of a InGaAs quantum well (QW) between the base and collector layers.

原文English
頁(從 - 到)133-145
頁數13
期刊Superlattices and Microstructures
29
發行號2
DOIs
出版狀態Published - 2001 二月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

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