Zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8 As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. From secondary-ion mass spectroscopy and Hall measurement, we conclude that zinc delta-doping can form an excellent abrupt profile (full-width at half maximum is of 10 nm) and offer a high two-dimensional hole gas sheet density (as high as 1 × 1013 cm-2). By adopting a strained InGaAs material as the active channel and by carefully modulating the spacer layer thickness, one can obtain a significantly enhanced hole mobility.
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