Study of two-dimensional hole gas concentration and hole mobility in zinc delta-doped GaAs and pseudomorphic GaAs/Ino0.2Ga0.8As heterostructures

R. T. Hsu, Y. S. Lin, J. S. Su, W. C. Hsu, Y. H. Wu, M. J. Kao

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Zinc delta-doped GaAs and pseudomorphic GaAs/In0.2Ga0.8 As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. From secondary-ion mass spectroscopy and Hall measurement, we conclude that zinc delta-doping can form an excellent abrupt profile (full-width at half maximum is of 10 nm) and offer a high two-dimensional hole gas sheet density (as high as 1 × 1013 cm-2). By adopting a strained InGaAs material as the active channel and by carefully modulating the spacer layer thickness, one can obtain a significantly enhanced hole mobility.

原文English
頁(從 - 到)175-180
頁數6
期刊Superlattices and Microstructures
24
發行號2
DOIs
出版狀態Published - 1998 八月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

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