Study of warpage due to P-V-T-C relation of EMC in IC packaging

Li Ching Hong, Sheng Jye Hwang

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

There were many studies about the prediction of warpage due to thermal mismatch [1], [2]. However, cure induced warpage is usually ignored and the results can be inaccurate. To minimize this problem, a thorough understanding of epoxy molding compound with pressure-volume-temperature-cure (P-V-T-C) relation is necessary. This paper used the P-V-T-C relation of an encapsulation material to formulate the stress-strain relationship. With the help of finite element method and mold flow analysis, warpage predictions combined with P-V-T-C relation were performed and the results show that this approach is practical. For a given P-V-T-C relation, the shrinkage direction is pointing toward the gate and maximum warpage usually occurs at the boundary of an integrated circuit package. Variation of specific volume difference along the flow direction is larger than that perpendicular to the flow direction. When temperature difference is small in thickness direction, specific volume difference in thickness direction varies only slightly.

原文English
頁(從 - 到)291-295
頁數5
期刊IEEE Transactions on Components and Packaging Technologies
27
發行號2
DOIs
出版狀態Published - 2004 六月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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