Study of zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistors

Rong Tay Hsu, Wei Chou Hsu, Jiann Shiun Wang, Ming Jer Kao, Yu Huei Wu, Jan Shing Su

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistor (HFET) grown by low-pressure metalorganic chemical vapor deposition has been realized. In terms of using the zinc-delta, doping technique by interrupting the growth, high concentration is carried out. The influence of spacer layer thickness on two-dimensional hole gas concentration and hole mobility is also studied. The delta-doped p-type trained InGaAs/GaAs HFET with 8 nm spacer layer thickness exhibits extrinsic transconductances of 15 mS/mm at 300 K and 24 mS/mm at 77 K. Secondary-ion mass spectrometry (SIMS) is carried out to confirm the film quality, zinc diffusion profile and sharpness of the proposed structures. Due to the smaller mobility difference in InGaAs/GaAs than in using AlGaAs barriers, the gate voltage swing in the p-channel delta-doped InGaAs/GaAs HFET exhibits a value about 1.7 V. Consequently, a wider linear amplifier application is expected in the present device.

原文English
頁(從 - 到)2085-2089
頁數5
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
發行號4 A
DOIs
出版狀態Published - 1996 四月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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