Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment

C. H. Wu, K. M. Chang, Y. M. Chen, B. W. Huang, Y. X. Zhang, S. Samukawa, S. Noda, Y. M. Li, S. J. Wang, B. J. Shih, K. M. Chang, C. H. Wu

研究成果: Conference contribution

摘要

Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm2/Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10-12 A, and better Ion/Ioff ratio of 2.76×106.

原文English
主出版物標題Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面517-520
頁數4
ISBN(電子)9781509050130
DOIs
出版狀態Published - 2018 三月 21
事件2nd International Conference on Communication and Electronics Systems, ICCES 2017 - Coimbatore, India
持續時間: 2017 十月 192017 十月 20

出版系列

名字Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017
2018-January

Conference

Conference2nd International Conference on Communication and Electronics Systems, ICCES 2017
國家India
城市Coimbatore
期間17-10-1917-10-20

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Control and Optimization
  • Modelling and Simulation
  • Instrumentation
  • Hardware and Architecture
  • Signal Processing
  • Electrical and Electronic Engineering
  • Mechanical Engineering

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  • 引用此

    Wu, C. H., Chang, K. M., Chen, Y. M., Huang, B. W., Zhang, Y. X., Samukawa, S., Noda, S., Li, Y. M., Wang, S. J., Shih, B. J., Chang, K. M., & Wu, C. H. (2018). Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment. 於 Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017 (頁 517-520). (Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017; 卷 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CESYS.2017.8321130