Study on contact and channel resistance of pentacene-based ambipolar organic thin-film transistors

Tsung Jun Ho, Guo En Yan, Horng Long Cheng

研究成果: Conference contribution

摘要

In this work, we investigated the electrical characteristics of pentacene-based ambipolar organic thin-film transistors (OTFTs) by modifying the channel length. We fabricated a top contact device structure with sliver as the source and drain electrodes and heavy doped p-type silicon wafer as the gate electrode. The channel length of the pentacene-based ambipolar OTFTs are 50, 100, 250, and 400 μm; the channel width is fixed. The output current of the n-channel and p-channel decreases with increasing channel length. The saturated mobility and threshold voltage of both channels increase with the increase in channel length. The increase rate of saturated mobility and threshold voltage of the n-channel is larger than that of the p-channel. The influence of channel length on the electrical properties of the p-channel and n-channel is different. We utilized the gated-transfer length method to study the contact resistance between sliver and pentacene and the channel resistance of pentacene. Contact and channel resistance decrease with the increase in gate voltage in the saturation region. The total resistance of pentacene-based ambipolar OTFTs increases with channel length at a fixed gate voltage. However, n-channel total resistance has stronger gate voltage and channel length dependence than p-channel total resistance. This result reveals that electron transport in the device channel requires a larger driving voltage than in the hole. Selecting a suitable channel length is critical to obtain a well-balanced performance of the dual carriers that transport ambipolar OTFTs and to avoid a large loss in injection barrier.

原文English
主出版物標題Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII
編輯Iain McCulloch, Ruth Shinar, Luisa Torsi, Oana D. Jurchescu, Ioannis Kymissis
發行者SPIE
ISBN(電子)9781628417340
DOIs
出版狀態Published - 2015
事件Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII - San Diego, United States
持續時間: 2015 八月 92015 八月 12

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9568
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Other

OtherOrganic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII
國家/地區United States
城市San Diego
期間15-08-0915-08-12

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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