Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy

S. Q. Wang, C. P. Liu, H. Q. Ye

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.

原文English
頁(從 - 到)385-389
頁數5
期刊Materials Characterization
44
發行號4
DOIs
出版狀態Published - 2000
事件5th IUMRS International Conference on Advance Materials - Beijing, China
持續時間: 1999 6月 131999 6月 18

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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