Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

Chun Yuan Chen, Wen Huei Chiou, Chih Hung Yen, Hung Ming Chuang, Jing Yuh Chen, Chin Chuan Cheng, Wen Chau Liu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

An interesting InP/InGaAs TEBT with double heterostructures was fabricated and studied. Temperature-dependent two- and three-terminal characteristics were detailed. Based on the use of an InP collector, the large breakdown voltage was obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Due to the use of the δ-doping sheet and spacer, the elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents were found. Furthermore, the dc current gain of the studied TEBT devices was improved and the relatively stable temperature-dependent properties were obtained. The variation rates of current gains were only about 7.4%, 8.1%, 18.9%, and 24.8% at collector currents of Ic=60, 6, 0.6, and 0.06 mA.

原文English
頁(從 - 到)82-86
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
發行號1 SPEC.
DOIs
出版狀態Published - 2003 1月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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