TY - JOUR
T1 - Study on electromigration effects and IMC formation on Cu–Sn films due to current stress and temperature
AU - Wang, Zhao Ying
AU - Dang, Nhat Minh
AU - Wang, Po Hsun
AU - Chen, Terry Yuan Fang
AU - Lin, Ming Tzer
N1 - Funding Information:
Funding: This research was funded by MOST, grant number 106-2221-E-005-012-MY3.
Funding Information:
Acknowledgments: This work was support by the Ministry of Science and Technology, Taiwan, under MOST106-2221-E-005-012-MY3.
Publisher Copyright:
© 2020 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2020/12/2
Y1 - 2020/12/2
N2 - In this study, the effects of electromigration on a solder/copper substrate due to temperature and current density stress were investigated. The copper–tin (Cu–Sn) film samples were subjected under a fixed current and various heating conditions (130◦ C and 180◦ C) and current densities (different cross-sectional areas). The micro-structural changes and intermetallic compound (IMC) formation were observed, and failure phenomena (brittle cracks, voids, bumps, etc.) on the structures of samples were discussed. The results showed that the IMC thickness increased as the temperature and current density increased. Moreover, it was found that the higher the temperature and current density was, the greater the defects that were observed. By adjusting the designs of sample structures, the stress from the current density can be decreased, resulting in reduced failure phenomena, such as signal delay, distortion, and short circuiting after long-term use of the material components. A detailed IMC growth mechanism and defect formation were also closely studied and discussed.
AB - In this study, the effects of electromigration on a solder/copper substrate due to temperature and current density stress were investigated. The copper–tin (Cu–Sn) film samples were subjected under a fixed current and various heating conditions (130◦ C and 180◦ C) and current densities (different cross-sectional areas). The micro-structural changes and intermetallic compound (IMC) formation were observed, and failure phenomena (brittle cracks, voids, bumps, etc.) on the structures of samples were discussed. The results showed that the IMC thickness increased as the temperature and current density increased. Moreover, it was found that the higher the temperature and current density was, the greater the defects that were observed. By adjusting the designs of sample structures, the stress from the current density can be decreased, resulting in reduced failure phenomena, such as signal delay, distortion, and short circuiting after long-term use of the material components. A detailed IMC growth mechanism and defect formation were also closely studied and discussed.
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U2 - 10.3390/app10248893
DO - 10.3390/app10248893
M3 - Article
AN - SCOPUS:85097669981
SN - 2076-3417
VL - 10
SP - 1
EP - 18
JO - Applied Sciences (Switzerland)
JF - Applied Sciences (Switzerland)
IS - 24
M1 - 8893
ER -