Study on preparation of high-k organic-inorganic thin film for organic-inorganic thin film transistor gate dielectric application

Wen Hsi Lee, Chao Te Liu, Ying Chieh Lee

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A simple solution-based deposition technique combined with spin-coating is a plausible way to prepare ultra-thin organic-inorganic nanocomposite films. In this study, we describe the spin-coating deposition of a colloidal nanoparticle suspension to obtain an ultra-thin organic-inorganic composite film as a gate insulator for organic thin film transistor (O-TFT) application. To obtain a homogenous organic-inorganic composite film, well-dispersed TiO 2 nanoparticles in γ-butyrolactone and polyimide are important; therefore, several dispersants were assessed on the basis of the measurement of the rheological behavior of slurries. The thickness of the organic-inorganic composite film is mainly determined by the speed of spin-coating and viscosity of slurries. An approximately 4000-Å-thick nanocomposite film with homogeneous distribution of TiO 2 nanoparticles in polyimide and low roughness was obtained after curing at 200 °C, resulting in a low leakage current density of the nano-composite film, when less than 2 vol% TiO 2 nanoparticles were well dispersed in polyimide slurry. The dielectric constant of the organic-inorganic nanocomposite increases with increasing TiO 2 content in polyimide, being situated in the range between 4 and 5.

原文English
文章編號061603
期刊Japanese journal of applied physics
51
發行號6 PART 1
DOIs
出版狀態Published - 2012 6月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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