Study on the low leakage current of an MIS structure fabricated by ICP-CVD

Physics & Astronomy

• MIS (semiconductors) 100%
• leakage 73%
• vapor deposition 68%
• carrier mobility 11%
• attraction 10%
• plasma density 10%
• hydrogen atoms 10%
• bombardment 10%
• oxide films 10%
• industries 9%
• transistors 8%
• crystal structure 8%
• breakdown 8%
• silicon dioxide 8%
• oxidation 8%
• current density 8%
• refractivity 7%
• oxides 6%
• single crystals 6%
• fabrication 6%
• curves 6%
• diffraction 5%
• thin films 5%
• ions 5%