Study on the rapid thermal annealing process of low-energy arsenic and phosphorous ion-implanted silicon by reflective second harmonic generation

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

We present an analytical method for diagnosing the rapid thermal annealing (RTA) condition of low energy ion-implanted silicon by reflective second harmonic generation (RSHG). The phenomena of recrystallization and implant diffusion of arsenic and phosphorous atoms implanted Si are easily observed by comparing a series of RSHG pattern. The implant atoms enter the Si site when the activation energy is sufficient to reach during the RTA process, and the residual electrical dipoles are presented accompanying the formation of Si-As and Si-P dipoles which are estimated by the bond orbital approach. The RSHG intensity is strongly dependent on the recrystallization degree of implanted silicon and the implantation density near the surface region which is a function of RTA temperature. With the assistance of the secondary ion mass spectrometry analysis, the actual distribution of the implantation density could be obtained and considered in the final analysis model. The anisotropic term of polarized RSHG patterns is an index to find the optimum RTA conditions; they indicate the recrystallization condition of the implanted silicon and the distribution of the implantation density near the surface.

原文English
頁(從 - 到)3926-3933
頁數8
期刊Journal of Physics D: Applied Physics
38
發行號21
DOIs
出版狀態Published - 2005 十一月 7

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 聲學與超音波
  • 表面、塗料和薄膜

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