We present an analytical method for diagnosing the rapid thermal annealing (RTA) condition of low energy ion-implanted silicon by reflective second harmonic generation (RSHG). The phenomena of recrystallization and implant diffusion of arsenic and phosphorous atoms implanted Si are easily observed by comparing a series of RSHG pattern. The implant atoms enter the Si site when the activation energy is sufficient to reach during the RTA process, and the residual electrical dipoles are presented accompanying the formation of Si-As and Si-P dipoles which are estimated by the bond orbital approach. The RSHG intensity is strongly dependent on the recrystallization degree of implanted silicon and the implantation density near the surface region which is a function of RTA temperature. With the assistance of the secondary ion mass spectrometry analysis, the actual distribution of the implantation density could be obtained and considered in the final analysis model. The anisotropic term of polarized RSHG patterns is an index to find the optimum RTA conditions; they indicate the recrystallization condition of the implanted silicon and the distribution of the implantation density near the surface.
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