Sub-0.1 μm MOSFET fabrication using 248 nm lithography by resist trimming technique in high density plasmas

Chian Yuh Sin, Loh Wei Loong, Bing Hung Chen, Yujie, Pradeep Yelehanka, Lap Chan

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

A resist trimming technique using oxygen containing gas mixture in high-density plasma is presented that allows the fabrication of sub-0.1 μm MOSFET with 248 nm lithography. The trimming step is done in-situ as part of the gate etch processes. The effect of the important etcher parameters such as RF source power, bias voltage, O2 gas flow, reactor pressure and over-etch percentage on the process characteristics such as trim rate, uniformity and microloading has been investigated by means of statistically designed experiments. These trends have been applied to the process optimization for a single layer photoresist, binary masks and conventional 248 nm illumination to fabricate 0.08 μm gate electrodes. Anisotropic profiles of polysilicon lines can be obtained with the trimmed resist as a mask. The effect of the trimming step on critical dimension control is quantified, and the electrical performance of the transistors is presented. The resist trimming process was found to be controllable and reproducible.

原文English
主出版物標題2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
編輯Hiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
發行者Institute of Electrical and Electronics Engineers Inc.
頁面460-463
頁數4
ISBN(電子)0780365208, 9780780365209
DOIs
出版狀態Published - 2001 一月 1
事件6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
持續時間: 2001 十月 222001 十月 25

出版系列

名字2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
1

Other

Other6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
國家China
城市Shanghai
期間01-10-2201-10-25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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