Sub-200ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy

Hui Zhao, Brian Glass, Pedram Khalili Amiri, Andrew Lyle, Yisong Zhang, Yu Jin Chen, Graham Rowlands, Pramey Upadhyaya, Zhongming Zeng, J. A. Katine, Juergen Langer, Kosmas Galatsis, Hongwen Jiang, Kang L. Wang, Ilya N. Krivorotov, Jian Ping Wang

研究成果: Article同行評審

38 引文 斯高帕斯(Scopus)

摘要

Ultrafast spin transfer torque (STT) switching in an in-plane MgO magnetic tunnel junction with 50nm×150nm elliptical shape was demonstrated in this paper. Switching speeds as short as 165ps and 190ps at 50% and 98% switching probabilities, respectively, were observed without external field assistance in a thermally stable junction with a 101% tunnelling magnetoresistance ratio. The minimum writing energy of P-AP switching for 50% and 98% switching probability are 0.16pJ and 0.21pJ, respectively. The observed ultrafast switching is believed to occur because of partially cancelled out-of-plane demagnetizing field in the free layer from interface perpendicular anisotropy between the MgO layer and the Co 20Fe 60B 20 layer. High J/J c0 ratio and magnetization nucleation at the edge of free layer, which result from the reduced perpendicular demagnetizing field, are possibly two major factors that contribute to the ultrafast STT switching.

原文English
文章編號025001
期刊Journal of Physics D: Applied Physics
45
發行號2
DOIs
出版狀態Published - 2012 一月 18

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 聲學與超音波
  • 表面、塗料和薄膜

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