Sub-40nm V-groove MOSFETs

J. Appenzeller; R. Martel; Ph Avouris; J. Knoch; Y. Lu; K. L. Wang; J. Scholvin; J. A. Del Alamo; P. Rice; P. Solomon

Sub-40nm V-groove MOSFETs

J. Appenzeller, R. Martel, Ph Avouris, J. Knoch, Y. Lu, K. L. Wang, J. Scholvin, J. A. Del Alamo, P. Rice, P. Solomon

電機資訊學院

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to L_g=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.

原文	English
頁面	95-96
頁數	2
出版狀態	Published - 2001
事件	Device Research Conference (DRC) - Notre Dame, IN, United States 持續時間: 2001 6月 25 → 2001 6月 27

Conference

Conference	Device Research Conference (DRC)
國家/地區	United States
城市	Notre Dame, IN
期間	01-06-25 → 01-06-27

All Science Journal Classification (ASJC) codes

工程 (全部)

其它文件與鏈接

引用此

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title = "Sub-40nm V-groove MOSFETs",

abstract = "The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to Lg=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.",

author = "J. Appenzeller and R. Martel and Ph Avouris and J. Knoch and Y. Lu and Wang, {K. L.} and J. Scholvin and {Del Alamo}, {J. A.} and P. Rice and P. Solomon",

year = "2001",

language = "English",

pages = "95--96",

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TY - CONF

T1 - Sub-40nm V-groove MOSFETs

AU - Appenzeller, J.

AU - Martel, R.

AU - Avouris, Ph

AU - Knoch, J.

AU - Lu, Y.

AU - Wang, K. L.

AU - Scholvin, J.

AU - Del Alamo, J. A.

AU - Rice, P.

AU - Solomon, P.

PY - 2001

Y1 - 2001

N2 - The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to Lg=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.

AB - The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to Lg=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.

UR - http://www.scopus.com/inward/record.url?scp=0034860349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034860349&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034860349

SP - 95

EP - 96

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

Sub-40nm V-groove MOSFETs

摘要

Conference

All Science Journal Classification (ASJC) codes

其它文件與鏈接

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引用此