Sub-band-gap photocurrent of an individual defective gan nanowire measured by conductive atomic force microscopy

Wen Huei Chu, Hsin Wei Chiang, Chuan Pu Liu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The sub-band-gap photocurrent of an individual defective GaN nanowire was measured using conductive atomic force microscopy (C-AFM) with the conductive tip under illumination. The intrinsic defects introduced additional states in the band-gap and assisted the inelastic tunneling process, resulting in negative differential resistance (NDR). The sample exhibited a photocurrent response at photon energies below the band gap energy of GaN due to the high density of defects in the nanowire. The cathodoluminescence spectrum of the GaN nanowire confirms that the defects give rise to sub-band-gap emissions. The mechanisms of the sub-band-gap photocurrent are discussed.

原文English
頁(從 - 到)H294-H296
期刊Electrochemical and Solid-State Letters
14
發行號7
DOIs
出版狀態Published - 2011 六月 29

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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