Substrate heating effect on the growth of a CdTe film on an InSb substrate by vacuum evaporation

Chen Jiann-Ruey, Houng Mau-Phon, Jenq Fenq-Lin, Fang Chien-Shyong, Tse Wan-Sun

研究成果: Article

摘要

Epitaxial CdTe thin films were grown on the (111) oriented InSb substrate by vacuum evaporation, with the substrate kept at 190-225°C during the film deposition. The chamber pressure during film deposition was at 3.5 × 10-6 mbar. X-ray diffraction was used to determine the film structure, while the full width at half maximum (FWHM) of the X-ray diffraction peak was used to examine the crystallinity of the as-deposited films. The film morphology was observed by the scanning electron microscope (SEM), and the film composition was determined by electron probe microanalysis (EPMA). The film quality was examined by infrared transmission spectroscopy. Results indicate that the quality of the grown CdTe films was improved with the higher substrate temperature during the film deposition.

原文English
頁(從 - 到)524-528
頁數5
期刊Surface Science
251-252
發行號C
DOIs
出版狀態Published - 1991 七月 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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