@inproceedings{e1c598c7c316488ea9f6b381bada187e,
title = "Subthreshold characteristics and high-frequency performance in InAlAs/InGaAs MHEMT with a liquid phase oxidized InAlAs gate",
abstract = "The oxidation of InAlAs and its application to 0.65 um InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the studied MOS-MHEMT exhibits a larger gate bias operation, higher breakdown voltage, lower subthreshold current, improved gate leakage current with the effectively suppressed impact ionization effect, and improved RF performance.",
author = "Lee, {Kuan Wei} and Lee, {Kai Lin} and Lin, {Xian Zheng} and Tu, {Chao Hsien} and Wang, {Yeong Her}",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/ICSICT.2006.306559",
language = "English",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "881--883",
booktitle = "ICSICT-2006",
address = "United States",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}