Subthreshold characteristics and high-frequency performance in InAlAs/InGaAs MHEMT with a liquid phase oxidized InAlAs gate

Kuan Wei Lee, Kai Lin Lee, Xian Zheng Lin, Chao Hsien Tu, Yeong Her Wang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The oxidation of InAlAs and its application to 0.65 um InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the studied MOS-MHEMT exhibits a larger gate bias operation, higher breakdown voltage, lower subthreshold current, improved gate leakage current with the effectively suppressed impact ionization effect, and improved RF performance.

原文English
主出版物標題ICSICT-2006
主出版物子標題2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者IEEE Computer Society
頁面881-883
頁數3
ISBN(列印)1424401615, 9781424401611
DOIs
出版狀態Published - 2006 一月 1
事件ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
持續時間: 2006 十月 232006 十月 26

出版系列

名字ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家China
城市Shanghai
期間06-10-2306-10-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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