Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

Chun Yu Chen, Jyi Tsong Lin, Meng-Hsueh Chiang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A device design technique for boosting nanowire MOSFET performance beyond a 10-nm technology node is proposed using physical modeling and 3-D numerical simulation. The revisited subthreshold kink effect improves the transistor ON-OFF current ratio and is achievable with supply bias lower than 1 V. The proposed technique overcomes the fundamental and thermal voltage-limited subthreshold swing (SS). An optimized device design methodology to exploit the lowered SS is provided as well.

原文English
文章編號7383277
頁(從 - 到)903-909
頁數7
期刊IEEE Transactions on Electron Devices
63
發行號3
DOIs
出版狀態Published - 2016 三月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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