Very high performance InGaP/InGaAs/GaAs PHEMT will be demonstrated. The fabricated InGaP gated PHEMT device with 0.25×160 μm2 of gate dimension shows a 304 mA/mm of saturation drain current at VGS = 0V, VDS = 2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.
|出版狀態||Published - 2001|
|事件||23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States|
持續時間: 2001 10月 21 → 2001 10月 24
|Other||23rd Annual GaAs IC Symposium 2001|
|期間||01-10-21 → 01-10-24|
All Science Journal Classification (ASJC) codes