Very high performance InGaP/InGaAs/GaAs PHEMTs will be demonstrated. The fabricated InGaP gated PHEMTs devices with 0.25 × 160 μm 2 and 0.25 × 300 μm 2 of gate dimensions show 304 mA/mm and 330 mA/mm of saturation drain current at V GS = 0 V, V DS = 2 V, and 320 mS/mm and 302 mS/mm of extrinsic transconductances, respectively. Noise figures for 160 μm and 300 μm gate-width devices at 12 GHz are measured to be 0.46 dB with a 13 dB associated gain and 0.49 dB with a 12.85 dB associated gain, respectively. With such a high gain and low noise, the drain-to-gate breakdown voltage can be larger than 11 V. Standard deviation in the threshold voltage of 22 mV for 160 μm gate-width devices across a 4-in wafer can be achieved using a highly selective wet recess etching process. Good thermal stability of these InGaP gated PHEMTs is also presented.
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