Superlattice of FexGe1-x nanodots and nanolayers for spintronics application

Tianxiao Nie, Xufeng Kou, Jianshi Tang, Yabin Fan, Murong Lang, Li Te Chang, Chia Pu Chu, Liang He, Sheng Wei Lee, Faxian Xiu, Jin Zou, Kang L. Wang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

FexGe1-x superlattices with two types of nanostructures, i.e. nanodots and nanolayers, were successfully fabricated using low-temperature molecular beam epitaxy. Transmission electron microscopy (TEM) characterization clearly shows that both the FexGe1-x nanodots and nanolayers exhibit a lattice-coherent structure with the surrounding Ge matrix without any metallic precipitations or secondary phases. The magnetic measurement reveals the nature of superparamagnetism in FexGe1-x nanodots, while showing the absence of superparamagnetism in FexGe1-x nanolayers. Magnetotransport measurements show distinct magnetoresistance (MR) behavior, i.e. a negative to positive MR transition in FexGe1-x nanodots and only positive MR in nanolayers, which could be due to a competition between the orbital MR and spin-dependent scatterings. Our results open a new growth strategy for engineering FexGe1-x nanostructures to facilitate the development of Ge-based spintronics and magnetoelectronics devices.

原文English
文章編號505702
期刊Nanotechnology
25
發行號50
DOIs
出版狀態Published - 2014 12月 19

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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