Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes

C. K. Wang, K. C. Hung, Y. Z. Chiou, J. S. Jheng, S. P. Chang, S. J. Chang

研究成果: Article

3 引文 (Scopus)

摘要

In this study, the numerical simulations with graded p-AlxGa1−xN/InyGa1−yN shortperiod superlattice (SPS) electron blocking layer (EBL) of blue InGaN/GaN light-emitting diodes (LEDs) have been investigated by the Advance Physical Model of Semiconductor Devices (APSYS) program. The simulation results show that the LEDs with graded p-AlxGa1−xN/InyGa1−yN SPS EBL exhibit better performances of internal quantum efficiency (IQE) and efficiency droop than those of conventional p-AlGaN/GaN SPS EBL. This is attributed to higher and lower effective potential barrier heights created in the conduction and valence band for electron and hole, respectively. The electron overflow effect can be effectively suppressed and the hole injection ability can also be remarkably enhanced. Therefore, the simulation results exhibit a significant increment in the IQE and the ratio of efficiency droop of the LEDs can be obviously reduced from 17.2% to 4.7%.

原文English
頁(從 - 到)562-566
頁數5
期刊Journal of Crystal Growth
468
DOIs
出版狀態Published - 2017 六月 15

指紋

Light emitting diodes
light emitting diodes
Electrons
Quantum efficiency
electrons
quantum efficiency
simulation
Semiconductor devices
Valence bands
Conduction bands
semiconductor devices
conduction bands
aluminum gallium nitride
injection
valence
Computer simulation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

引用此文

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title = "Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes",
abstract = "In this study, the numerical simulations with graded p-AlxGa1−xN/InyGa1−yN shortperiod superlattice (SPS) electron blocking layer (EBL) of blue InGaN/GaN light-emitting diodes (LEDs) have been investigated by the Advance Physical Model of Semiconductor Devices (APSYS) program. The simulation results show that the LEDs with graded p-AlxGa1−xN/InyGa1−yN SPS EBL exhibit better performances of internal quantum efficiency (IQE) and efficiency droop than those of conventional p-AlGaN/GaN SPS EBL. This is attributed to higher and lower effective potential barrier heights created in the conduction and valence band for electron and hole, respectively. The electron overflow effect can be effectively suppressed and the hole injection ability can also be remarkably enhanced. Therefore, the simulation results exhibit a significant increment in the IQE and the ratio of efficiency droop of the LEDs can be obviously reduced from 17.2{\%} to 4.7{\%}.",
author = "Wang, {C. K.} and Hung, {K. C.} and Chiou, {Y. Z.} and Jheng, {J. S.} and Chang, {S. P.} and Chang, {S. J.}",
year = "2017",
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language = "English",
volume = "468",
pages = "562--566",
journal = "Journal of Crystal Growth",
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TY - JOUR

T1 - Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes

AU - Wang, C. K.

AU - Hung, K. C.

AU - Chiou, Y. Z.

AU - Jheng, J. S.

AU - Chang, S. P.

AU - Chang, S. J.

PY - 2017/6/15

Y1 - 2017/6/15

N2 - In this study, the numerical simulations with graded p-AlxGa1−xN/InyGa1−yN shortperiod superlattice (SPS) electron blocking layer (EBL) of blue InGaN/GaN light-emitting diodes (LEDs) have been investigated by the Advance Physical Model of Semiconductor Devices (APSYS) program. The simulation results show that the LEDs with graded p-AlxGa1−xN/InyGa1−yN SPS EBL exhibit better performances of internal quantum efficiency (IQE) and efficiency droop than those of conventional p-AlGaN/GaN SPS EBL. This is attributed to higher and lower effective potential barrier heights created in the conduction and valence band for electron and hole, respectively. The electron overflow effect can be effectively suppressed and the hole injection ability can also be remarkably enhanced. Therefore, the simulation results exhibit a significant increment in the IQE and the ratio of efficiency droop of the LEDs can be obviously reduced from 17.2% to 4.7%.

AB - In this study, the numerical simulations with graded p-AlxGa1−xN/InyGa1−yN shortperiod superlattice (SPS) electron blocking layer (EBL) of blue InGaN/GaN light-emitting diodes (LEDs) have been investigated by the Advance Physical Model of Semiconductor Devices (APSYS) program. The simulation results show that the LEDs with graded p-AlxGa1−xN/InyGa1−yN SPS EBL exhibit better performances of internal quantum efficiency (IQE) and efficiency droop than those of conventional p-AlGaN/GaN SPS EBL. This is attributed to higher and lower effective potential barrier heights created in the conduction and valence band for electron and hole, respectively. The electron overflow effect can be effectively suppressed and the hole injection ability can also be remarkably enhanced. Therefore, the simulation results exhibit a significant increment in the IQE and the ratio of efficiency droop of the LEDs can be obviously reduced from 17.2% to 4.7%.

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JO - Journal of Crystal Growth

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