Suppression of both sidewall injection and hot-carrier effects using laterally graded emitter in bipolar transistors

Tzuen Hsi Huang, Ming Jer Chen, Ching Yuan Wu

研究成果: Conference contribution

摘要

As scaling down the feature size of a bipolar transistor, the spacer between the emitter contact and the base contact becomes so much smaller that the diffused extrinsic base may encroach on the heavily-doped emitter. Two major serious problems concerned are the degradations due to the sidewall injection at forward bias and the hot carrier stress at reverse bias. A novel structure, so called Laterally Graded Emitter (LGE), has been recently proposed to solve these problems in BiCMOS applications. But it still has some limitations to apply such structure to the advanced bipolar transistors. The authors present a study on the utility of LGE structure for scaled bipolar transistors by two-dimensional numerical simulator PISCES-II B.

原文English
主出版物標題1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
發行者Institute of Electrical and Electronics Engineers Inc.
頁面205-209
頁數5
ISBN(電子)078030036X, 9780780300361
DOIs
出版狀態Published - 1991 1月 1
事件1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
持續時間: 1991 5月 221991 5月 24

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN(列印)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
國家/地區Taiwan
城市Taipei
期間91-05-2291-05-24

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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